Co-reporter:Xiaohui Liu, Zhengxin Liu, Fanying Meng, Mutsumi Sugiyama
Solar Energy Materials and Solar Cells 2014 Volume 124() pp:227-231
Publication Date(Web):May 2014
DOI:10.1016/j.solmat.2014.02.008
•Ditertiarybutylsulfide [(t-C4H9)2S: DTBS] was selected as a sulfur source.•Cu(In,Ga)Se2 (CIGS) thin films were sulfurized using DTBS.•Sulfurization improved the electrical and optical properties of CIGS films.•Solar cells fabricated with sulfurized CIGS films improved efficiencies.Surface sulfurization of Cu(In,Ga)Se2 (CIGS) thin films was carried out using liquid ditertiarybutylsulfide [(t-C4H9)2S: DTBS] to improve the performances of CIGS-based solar cells. The initial CIGS thin films were prepared by using the conventional three-stage co-evaporation process. Characterization by scanning electron microscopy, energy dispersive X-ray spectroscopy line scan, X-ray diffraction, and photoluminescence showed that the electrical and optical properties of the absorber layers were improved after sulfurization. The performances of the solar cells incorporating the CIGS films were remarkably improved when films sulfurized with DTBS were used. The efficiency of the solar cells fabricated with CIGS films increased significantly from 12.4% to 13.6% with an open-circuit voltage of 642 mV, short-circuit current density of 30.95 mA/cm2, and a fill factor of 68.2%. The improved cell performances can be attributed to the formation of a very thin sulfide layer on the CIGS layer and/or surface passivation by S atoms.
Co-reporter:Xiaohui Liu, Zhengxin Liu, Fanying Meng, Shigefusa F. Chichibu, Mutsumi Sugiyama
Thin Solid Films 2014 Volume 558() pp:400-404
Publication Date(Web):2 May 2014
DOI:10.1016/j.tsf.2014.02.066
•Ditertiarybutylsulfide [(t-C4H9)2S: DTBS] was selected as a sulfur source.•CuInS2 (CIS) thin films were prepared by sulfurization using DTBS.•CIS thin films sulfurized at high temperature and moderate DTBS flow rate.•The films have appropriate grains and good crystalline quality.Sulfurization growth of single-phase chalcopyrite CuInS2 (CIS) thin films was demonstrated using less hazardous liquid metal–organic ditertiarybutylsulfide [(t-C4H9)2S: DTBS]. The effect of sulfurization temperature and DTBS flow rate on the structural and optical properties of CIS was analyzed by scanning electron microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, and photoluminescence spectra. The measurement results indicated that the CIS film formed by this method was suitable as a photo-absorbing layer for CIS-based solar cells.
