Photocathode devices operating in reflection-mode, where the photoemission is detected on the same side as the light irradiation, were developed for the detection of deep ultraviolet light by using p-AlxGa1−xN films grown on Si(1 1 1) substrates. The external quantum efficiencies were as high as 20–15% at 200 nm and 280 nm, while the value was as low as 10−2% at 310 nm. The on–off ratio was more than four orders of magnitude, which represents high solar-blind sensitivity. The escape probability of AlxGa1−xN photocathode was decreased with increase of AlN mole fraction. The effective barrier potential against the photoelectron emission near the surface was reduced due to the upward shift of conduction band of AlxGa1−xN. The photoemission from the AlxGa1−xN films terminated with Cs–O adatoms will be discussed in terms of band diagrams that were evaluated by hard X-ray photoelectron spectroscopy.
