Co-reporter:C. Heck, A. Chayahara, Y. Horino, R. Funahashi, R.M.N. Miranda, M.N. Baibich
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2006 Volume 242(1–2) pp:137-139
Publication Date(Web):January 2006
DOI:10.1016/j.nimb.2005.08.063
The effect of implantation of Fe and Ar on the resistive properties of Cr films has been investigated. A broad minimum in the resistivity at fairly high temperatures has been observed when Fe was implanted in Cr. Subsequent implantation of Ar causes the minimum to shift to lower temperatures. The damage caused by implantation is observed to be the leading factor affecting the resistivity properties of these implanted Cr layers.
Co-reporter:C. Heck, T. Seki, T. Oosawa, M. Chikamatsu, N. Tanigaki, T. Hiraga, J. Matsuo
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2006 Volume 242(1–2) pp:140-142
Publication Date(Web):January 2006
DOI:10.1016/j.nimb.2005.08.062
Argon gas cluster ion beam (GCIB) was employed to improve the surface smoothness of indium tin oxide (ITO) substrates. The dependence of the smoothness as well as of the sputtered depth on cluster ion energy and dose has been studied. Results show that relatively low-energy (10 keV) clusters with mean size of 2000 Ar atoms are sufficient to reduce the mean roughness of the ITO surface to about one fourth of its initial value.Organic electroluminescent (EL) devices (α-NPD/Alq3/Mg–Ag) were formed on the smoothed surfaces and a considerable improve of the devices’ EL efficiency was observed.
